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2022 | 2021 | 2020 | 2019 | 2018 | 2017 | 2016 | 2015 | 2014 | 2013 | 2012 |
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2022 | |||||||||||||
1. |
S.-I. Cho, W.-H. Jang, H.-Y. Cha and H.-T. Kim "Analysis of Hot Carrier Degradation in 0.25-um Schottky Gate AlGaN/GaN HEMTs" Journal of Electromagnetic Engineering and Science, Vol. 22, No. 3, pp. 291~295, May, 2022 |
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2. |
C.-H. Jang, H.-S. Kim, H.-T. Kim and H.-Y. Cha "Temperature- and Frequency-Dependent Ferroelectric Characteristics of Metal-Ferroelectric-Metal Capacitors with Atomic-Layer-Deposited Undoped HfO2 Films" Materials, vol. 15, no. 6, p. 2097, Mar, 2022 |
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2021 | |||||||||||||
1. |
J. H. Choi, H. Kim and H. Cha, "Recessed AlGaN/GaN Heterojunction-Based Hydrogen Sensor Operated by Reverse Bias Mode", IEEE sensors journal, vol. 21, no. 2, pp. 1244-1249, January, 2021 |
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2. |
V. C. Nguyen, K. KIM and H. Kim, "Performance Optimization of Nitrogen Dioxide Gas Sensor Based on Pd-AlGaN/GaN HEMTs by Gate Bias Modulation", Micromachines, vol. 12, no. 4, p. 400, April, 2021 |
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3. |
K. Kim, J. Jang, H. Kim, "Negative differential resistance in Si/GaAs tunnel junction formed by single crystalline nanomembrane transfer method", Results in Physics, vol. 25, p. 104279, May, 2021 |
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4. |
T. A. Vuong, H. Cha, H. Kim, "Response Enhancement of Pt–AlGaN/GaN HEMT Gas Sensors by Thin AlGaN Barrier with the Source-Connected Gate Configuration at High Temperature", Micromachines, vol. 12, no. 5, p. 537, May, 2021 |
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5. |
V. C. Nguyen, H. Cha, H. Kim, "Operation of NO2 Gas Sensors based on Pd-AlGaN/GaN HEMT up to 500 C", JSTS, vol. 21, no. 06, pp. 412 - 417, December, 2021 |
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2020 | |||||||||||||
1. |
N. V. Cuong, and H. Kim, "High Performance NO2 Gas Sensor Based on Pd-AlGaN/GaN High Electron Mobility Transistors with Thin AlGaN Barrier", Journal of Semiconductor Technology and Science, vol. 20, no. 2, pp. 170-176, April, 2020 | ||||||||||||
2. |
B. Chatterjee, D. Shoemaker, Y. Song, T. Shi, H. -L. Huang, D. Keum, A. Krishnan, B. M. Floey, I. Jovanovic, J. Hwang, H. Kim, and S. Choi, "Cumulative Impacts of Proton Irradiation on the Self-heating of AlGaN/GaN HEMTs", ACS Applied Electronic Materials, vol. 2, no. 4, pp. 980-991, March, 2020 | ||||||||||||
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3. |
J. S. Lundh, Y. Song, B. Chatterjee, A. G. Baca, R. J. Kaplar, A. M. Armstrong, A. A. Allerman, B. A. Klein, D. Kendig, H. Kim, and S. Choi, "Device-Level Multidimensional Thermal Dynamics With Implications for Current and Future Wide Bandgap Electronics", Jounal of Electronic Packaging, vol. 142, no. 3, p. 031113 ,May, 2020 | ||||||||||||
4. |
B. Chatterjee, C. Dundar, T. E. Beechem, E. Heller, D. Kendig, H. Kim, N. Donmezer, and S. Choi, "Nanoscale electro-thermal interactions in AlGaN/GaN high electron mobility transistors", Journal of Applied Physics, vol. 127, no. 4, p. 044502, January, 2020 | ||||||||||||
5. |
J. H. Choi, T. A. Vuong, H. Kim and H. Cha, "High-Sensitivity Hydrogen Sensor Based on AlGaN/GaN Heterojunction Field-Effect Transistor", Journal of Nanoscience and Nanotechnology, vol. 20, no. 7, pp. 4404-4408, July, 2020 | ||||||||||||
6. |
H. S. Kim, M. J. Kang, W. H. Jang, K. S. seo, H. Kim, H. Cha, "PECVD SiNx passivation for AlGaN/GaN HFETs with ultra-thin AlGaN barrier", Solid State Electronics, vol. 173, p. 107876, November, August, 2020 | ||||||||||||
7. |
J. H. Choi, H. Kim and H. Cha, "Improved Stability of AlGaN/GaN Heterojunction Schottky-diode-type Hydrogen Sensor Using Constant Current Source Operation", Journal of semiconductor technology and science, vol. 20, no. 5, pp. 430-435, October, 2020 | ||||||||||||
2019 | |||||||||||||
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1. |
June-Heang Choi, Hyungtak Kim, Hyuk-Kee Sung, and Ho-Young Cha, " Investigation of Stability and Power Consumption of an AlGaN/GaN Heterostructure Hydrogen Gas Sensor Using Different Bias Conditions", Sensors, vol. 19, no. 24, p. 5549, December, 2019 |
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2. |
Geunho Cho, Ho-young Cha, and Hyungtak Kim, " Influence of Oxygen-Plasma Treatment on In-Situ SiN/AlGaN/GaN MOSHEMT with PECVD SiO2 Gate Insulator", Materials, vol. 12, no. 23, p. 3968, November, 2019 |
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3. |
Dongmin Keum, Hyungtak Kim, " Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors", Micromachines, vol. 10, no. 11, p. 723, October, 2019 |
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4. |
Dongmin Keum, Hyungtak Kim, "Proton-irradiation Effects on Charge Trapping-related Instability of Normally-off AlGaN/GaN Recessed MISHFETs", Journal of Semiconductor Technology and Science, vol. 19, no. 2, pp. 214-219, April, 2019 |
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5. |
G. H. Chung, T. A. Vuong, H. Kim, "Demonstration of hydrogen sensing operation of AlGaN/GaN HEMT gas sensors in extreme environment", Results in Physics, vol. 12, pp. 83-84, March, 2019 |
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2018 | |||||||||||||
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1. |
Hyun-Seop Kim, Su-Kuen Eom, Kwang-Seok Seo, Hyungtak Kim, Ho-Young Cha, "Time-dependent dielectric breakdown of recessed AlGaN/GaN-on-Si MOSHFETs with PECVD SiO2 gate oxide", Vacuum, vol. 155, pp. 428-433, September, 2018 |
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2. |
Dongmin Keum and Hyungtak Kim, "Energy-Dependent Degradation Characteristics of AlGaN/GaN MISHEMTs with 1, 1.5, and 2 MeV Proton Irradiation", ECS Journal of Solid State Science and Technology, vol. 7, no. 9, pp. 159-163, August, 2018 |
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3. |
Dongmin Keum, Hyungtak Kim, "Low-temperature characteristics of normally-off AlGaN/GaN-on-Si gate-recessed MOSHFETs", Cryogenics, vol. 93, pp. 51-55, July, 2018 |
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4. |
G. Chung, H.-Y. Cha, H. Kim, "Enhanced hydrogen sensitivity of AlGaN/GaN heterojunction gas sensors by GaN-cap layer", |
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5. |
S. Ji, H. Kim, and I.-H. Cho, "Characteristics of Recess Structure Tunneling Field Effect Transistor for High on Current Drivability", Journal of Semiconductor Technology and Science, vol. 18, no. 3, pp. 360-366, June, 2018 |
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6. |
J.-I. Kang, H.-K. Sung, H. Kim, E. Chong, H.-Y. Cha, "Diode quenching for Geiger mode avalanche photodiode", |
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7. |
H.-S. Kim, W.-H. Jang, S.-K. Eom, S.-W. Han, H. Kim, K.-S. Seo, C.-H. Cho, and H.-Y. Cha, "Effects of PECVD SiO2 Gate Dielectric Thickness on Recessed AlGaN/GaN MOS-HFETs", Journal of Semiconductor Technology and Science, vol. 18, |
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8. |
J.-I. Kang, H. Kim, C.-Y. Han, H. Yang, S. R. Jeon, B. Park, and H.-Y. Cha, "Enhanced UV Absorption of GaN Photodiodes with a ZnO Quantum Dot Coating Layer", Optics Express, vol. 26, no. 7, pp. 8296-8300, March, 2018 |
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9. |
G. Cho, H.-Y. Cha, and H. Kim, "Parastic Resistance Effects on Mobility Extraction of Normally-off AlGaN/GaN Gate-recessed MISHFETs", Journal of Semiconductor Technology and Science, vol.18, no.1, pp. 78-83, February, 2018 |
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10. |
J.-G. Lee, D.-H. Kim, S.-K. Eom, S.-H. Roh, K.-S. Seo, H.-S. Kim, H. Kim, H.-Y. Cha, and Y.-C. Byun, "Improved Interface Characteristics of Mo/SiO2/4H-SiC Metal-Oxide-Semiconductor with Post-Metallization Annealing", Journal of the Korea Physical Society, vol. 72, no. 1, pp. 166-170, January, 2018 |
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2017 | |||||||||||||
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1. |
Dongmin Keum, Geunho Cho, Hyungtak Kim, "Degradation Characteristics of AlGaN/GaN MOS-Heterostructure FETs by Alpha-Particle Irradiation", ECS Journal of Solid State Science and Technology, vol. 6, no. 11, pp.S3030-S3033, August, 2017 |
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2. |
June-Heang Choi, Min-Gi Jo, Sang-Woo Han, Hyungtak Kim, Seung-Hwan Kim, Soohwan Jang, Jung-Sik Kim, Ho-Young Cha, "Hydrogen gas sensor of Pd-functionalised AlGaN/GaN heterostructure with high sensitivity and low-power consumption", Electronics Letters, vol. 53, no. 17, pp. 1200-1202, August, 2017 |
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3. |
Sang-Woo Han, Min-Gi Jo, Hyungtak Kim, Chun-Hyung Cho, Ho-Young Cha, "AlGaN/GaN-on-Si monolithic power-switching device with integrated gate current booster", Solid-State Electronics, vol. 134, pp. 30-38, August, 2017 |
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4. |
Jun-Hyung Cho, Hyungtak Kim, Hyuk-Kee Sung, "Performance optimization of an optically combined dual-loop optoelectronic oscillator based on optical interference analysis", Optical Engineering, vol.56, no.6, pp. 066111-1-066111-6, June, 2017 |
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5. |
Hyun-Seop Kim, Won-Ho Jang, Sang-Woo Han, Hyungtak Kim, Chun-Hyung Cho, Jungwoo Oh, and Ho-Young Cha, "AlGaN/GaN-on-Si Power FET with Mo/Au Gate", Journal of Semiconductor Technology and Science, vol.17, no.2, pp.204-209, April, 2017 |
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6. |
Dongmin Keum, Hyuk-kee Sung, and Hyungtak Kim, "Degradation Characteristics of Normally-off p-AlGaN gate AlGaN/GaN HEMTs with 5 MeV Proton Irradiation", IEEE Transactions on Nuclear Science, vol.64, no.1, pp.258-262, January, 2017 |
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2016 | |||||||||||||
1. |
Hyungtak Kim, Youngjin Kang, and Hyuk-Kee Sung, "Investigation of Kink Effect in Normally-off AlGaN/GaN Recessed-gate MOS-Heterosturcture FETs", Journal of Vacuum Science Technology B, vol.34, no.5, September, 2016 |
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2. |
Sung-Hoon Park, Jae-Gil Lee, Chun-Hyung Cho, Yearn-Ik Choi, Hyungtak Kim, and Ho-Young Cha, "Diode Embedded AlGaN/GaN Heterojunction Field-Effect Transistor", Journal of Semiconductor Technology and Science, vol.16, no.2, pp. 215-220, April, 2016 |
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3. |
D. Keum, K. Cho, and H. Kim, "Non-volatile memory operation in normally-off GaN MOS heterostructure field effect transistors with thin AlGaN barrier", Electronics Letters, vol. 52, no. 8, pp. 661-663, April, 2016 |
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2015 | |||||||||||||
1. |
Dongmin Keum, Ho-young Cha, and Hyungtak Kim, "Proton Bombardment Effects on Normally-off AlGaN/GaN-on-Si Recessed MISHeterostructure FETs," IEEE Transactions on Nuclear Science, vol. 62, no. 6, pp. 3362-3368, December, 2015 |
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2. |
Sungju Choi, Youngjin Kang, Jonghwa Kim, Jungmok Kim, Sung-Jin Choi, Dong Myong Kim, Ho-Young Cha, Hyungtak Kim, and Dae Hwan Kim, "Frequency-dependent C-V Characteristic-based Extraction of Interface Trap Density in Normally-off Gate-recessed AlGaN/GaN Heterojunction Field-effect Transistors," Journal of Semiconductor Technology and Science, vol.15, no.5, pp. 497-502, October, 2015 |
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3. |
Jun-Hyung Cho, Hyungtak Kim, and Hyuk-Kee Sung, "Reduction of Spurious Tones and Phase Noise in Dual-Loop OEO by Loop-Gain Control," IEEE Photonics Technology Letters, vol. 27, no. 13, pp. 1391-1393, July, 2015 |
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4. |
Youngjin Kang, Sungju Choi, Ho-Young Cha, Hyungtak Kim and Dae Hwan Kim, "Extraction of the interface trap density through the differential subthreshold ideality factor technique in normally-off AlGaN/GaN MOSHFETs," Journal of the Korean Physical Society, vol. 66, no. 8, pp. 1291-1294, April, 2015 |
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2014 | |||||||||||||
1. |
J.-Y. Lee, B.-R. Park, H. Kim, J. Kim, and H.-Y. Cha. "AlGaN/GaN MOSHFET power switching transistor with embedded fast recovery diode," Electon. Mater. Lett., vol. 10, no. 6, pp. 1115-1120, November, 2014 |
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2. |
Dong-Min Keum, Shinhyuk Choi, Youngjin Kang, Jae-Gil Lee, Ho-Young Cha, and Hyungtak Kim, "Temperature-Dependent Instabilities of DC characteristics in AlGaN/GaN-on-Si Heterojunction Field Effect Transistors," Journal of Semiconductor Technology and Science, vol.14, no.5, pp. 682-687, October, 2014 |
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3. |
S. Choi, J.-G. Lee, Y. Kang, C.-H. Cho, H.-Y. Cha, and H. Kim, "Development of a Au-free process using Mo-based metallization for high-power AlGaN/GaN-on-Si heterostructure field effect transistors," Journal of Korean Physical Society, vol. 64, no. 4, pp. 526-531, September, 2014 |
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2013 | |||||||||||||
1. |
S. Choi, J.-G. Lee, H.-Y. Cha, and H. Kim, "Degradation characteristics of high-voltage AlGaN/GaN-on-Si heterostructure FETs under a reverse gate bias stress," Journal of the Korean Physical Society, vol. 63, no. 6, pp. 1208-1212, October, 2013 |
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2. |
S. Choi, J.-G. Lee, H.-Y. Cha, and H. Kim, "Bias-stress-induced trapping effect of high-voltage field-plated AlGaN/GaN-on-Si heterostructure FETs," Journal of Korean Physical Society, vol.62, no. 6, pp.954-958, April, 2013 |
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3. |
J.-G. Lee, S. Choi, B.-R. Park, K.-S. Seo, H. Kim, and H.-Y. Cha, "Nonvolatile Memory Devices Based on SiO2/GaN/AlGaN/GaN structures," Electronic Letters, vol. 49, no. 8, pp. 529-531, April, 2013 |
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4. |
B.-R. Park, J.-G. Lee, W. Choi, H. Kim, K.-S. Seo and H.-Y. Cha, "High Quality ICPCVD SiO2 for Normally-off AlGaN/GaN-on-Si Recessed MOSHFETs," IEEE Electron Device Letter, vol. 34, no. 3, pp. 354-356, March, 2013 |
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5. |
H.-S. Yoon, H.-K. Sung, and H. Kim, "Field-induced Degradation of Organic Field-effect Transistors under Vacuum Condition," Journal of the Korean Physical Society, vol. 62, no. 3, pp. 536-540, February, 2013 |
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2012 | |||||||||||||
1. |
Y.-S. Kim, M.-K. Bae, W.-J. Kim. D.-S. Kong, H.-K. Jung, H. Kim, S.-W Kim, D.-M. Kim, D.-H. Kim, "Amorphous InGaZnO Thin-Film Transistors:Part I: Complete Extraction of Density of States Over the Full Subband-Gap Energy Range," IEEE Transactions on Electron Devices, vol.59, no.10, pp.2689-2698, October, 2012 |
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2. |
H.-S. Yoon and H. Kim, "Optimization of Field-plate AlGaN/GaN HFETs for High-voltage and High-frequency Operation," Journal of the Korean Physical Society, vol.60, no.1, pp. 113-117, January, 2012 |
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2010 ~ 2000 | |||||||||||||
1. |
H. Kim, J. Lim, and H.-Y. Cha, "DC Characteristics of Wide Bandgap Semiconductor Feild Effect Transistors at Cryogenic Temperatures," Journal of Korean Physical Society, vol. 56, no. 5, pp. 1523-1526, 2010 |
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2. |
H.-Y. Cha, H.-K. Sung, H. Kim, C.-H. Cho, and P. M. Sandvik, "4H-SiC Avalanche Photodiodes for 280nm UV Detection," IEICE Transactions on Electronics, vol. E93.C, no. 5, pp. 648-650, 2010 |
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3. |
D. W. Kim, I. Cho, J. Y. Kim, H. L. Jang, G. S. Han, H. S. Jung, H. Kim, and K. S. Hong "Simple Large-Scale Synthesis of Hydroxyapatite Nanoparticles: In Situ Observation of Crystallization Process," Langmuir, vol. 26, no. 1, pp. 384-388, 2009 |
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4. |
H. S. Jung and H. Kim, "Origin of Low Photocatalytic Activity of Rutile TiO2," Electronic Materals Letters, vol. 5, no.2, pp. 73-76, 2009 |
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5. |
H. Kim and L. F. Eastman, "High-electric-field Induced Trap Generation in AlGaN/GaN Heterostructure Field effect Transistors," Journal of The Korean Physical Society, vol. 55, no. 2, pp. 666-670, 2009 |
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6. |
L. F. Eastman, V. Tilak, R. Thompson, B. Green, V. Kaper, T. Prunty, R. Shealy, J. Smart, and H. Kim, "High power AlGaN/GaN HEMT`s," Compound Semiconductors 2002, vol. 174, pp. 227-230, 2003 |
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7. |
V. Kaper, V. Tilak, H. Kim, A. Vertiatchikh, R. M. Thompson, T. Prunty, L. F. Eastman, and J. R. Shealy, "High-power monolithic AlGaN/GaN HEMT oscillator," IEEE Journal of Solid-state Circuits, vol. 38, no. 9, pp. 1457-1461, 2003 |
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8. |
H. Kim, R. M. Thompson, V. Tilak, T. Prunty, J. R. Shealy, and L. F. Eastman, "Effects of SiN passivation and high-electric field on AlGaN/GaN HFET degradation," IEEE Electron Device Letters, vol. 24, no. 7, pp. 421-423, 2003 |
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9. |
H. Kim, A. Vertiatchikh, R. M. Thompson, V. Tilak, T. R. Prunty, J. R. Shealy, and L. F. Eastman, "Hot electron induced degradation of undoped AlGaN/GaN HFETs," Microelectronics Reliability, vol. 43, no. 6, pp. 823-827, 2003 |
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10. |
G. Koley, H. Kim, L. F. Eastman, and M. G. Spencer, "Electrical bias stress related degradation of AlGaN/GaN HEMTs," Electronics Letters, vol. 39, no. 16, pp. 1217-1218, 2003 |
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11. |
D. K. Sahoo, R. K. Lal, H. Kim, V. Tilak, and L. F. Eastman, "High-field effects in sillicon nitride passivated GaN MODFETs," IEEE Ttansactions on Electron Devices, vol. 50, no. 5, pp. 1163-1170, 2003 |
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12. |
V. Tilak, V. Kaper, R. Thompson, T. Prunty, H. Kim, J. Smart, J. R. Shealy, and L. F. Eastman, "Correlation of pulsed IV measurements and high power performance of AlGaN/GaN HEMTs," Compound Semiconductors 2002, vol. 174, pp. 287-290, 2003 |
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13. |
L. F. Eastman, V. Tilak, J. Smart, B. Green, A. Vertiatchikh, N. Weimann, O. Ambacher, E. Chumbes, H. Kim, T. Prunty, J. H. Hwang, W. J. Schaff, B. K. Ridley, and J. R. Shealy, and V. Kaper, "Progress in nitride-based microwave HEMTs," Compound Semiconductors 2001, no. 170, pp. 1-9, 2002. |
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14. |
L. F. Eastman, V. Tilak, J. Smart, B. M. Green, E. M. Chumbes, R. Dimitrov, H. Kim, O. S. Ambacher, N. Weimann, T. Prunty, M. Murphy, W. J. Schaff, and J. R. Shealy, "Undoped AlGaN/GaN HEMTs for microwave power amplification," IEEE Transactions on Electron Devices, vol. 48, no. 3, pp. 479-485, 2001. |
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15. |
B. M. Green, V. Tilak, S. Lee, H. Kim, J. A. Smart, K. J. Webb, J. R. Shealy, and L. F. Eastman, "High-power broad-band AlGaN/GaN HEMT MMICs on SiC substrates," IEEE Transactions on Microwave Theory and Techniques, vol. 49, no. 12, pp. 2486-2493, 2001. |
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16. |
H. Kim, V. Tilak, B. M. Green, J. A. Smart, W. J. Schaff, J. R. Shealy, and L. F. Eastman, "Reliability evaluation of high power AlGaN/GaN HEMTs on SiC substrate," Physica Status Soldi a-applied Research, vol. 188, no. 1, pp. 203-206, 2001. |
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17. |
V. Tilak, B. Green, V. Kaper, H. Kim, T. Prunty, J. Smart, and J. Shealy, and L. F. Eastman, "Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs," IEEE Electron Device Letters, vol. 22, no. 11, pp. 504-506, 2001. |
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18. |
R. Dimitrov, V. Tilak, W. Yeo, B. Green, H. Kim, J. Smart, E. Chumbes, J. R. Shealy, W. Schaff, L. F. Eastman, C. Miskys, O. Ambacher, and M. Stutzmann, "Influence of oxygen and methane plasma on the electrical properties of undoped AlGaN/GaN heterostructures for high power transistors," Solid-state Electronics, vol. 44, no. 8, pp. 1361-1365, 2000. |
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19. |
B. M. Green, K. K. Chu, J. A. Smart, V. Tilak, H. Kim, J. R. Shealy, and L. F. Eastman, "Cascode connected AlGaN/GaN HEMT's on SiC substrates," IEEE Microwave and Guided Wave Letters, vol. 10, no. 8, pp. 316-318, 2000. |
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Copyright (C) 2011 Hongik Uni. MiRe Lab. All rights reserved.
P508, Electronic and Electrical Engineering, Hongik University, 94, Wausan-ro, Mapo-gu, Seoul, Korea
TEL: +82-2-320-3013 FAX: +82-2-320-1193 Email: rmaehdalf@hanmail.nett