International Journals

2010 ~

1.

S.-I. Cho, W.-H. Jang, H.-Y. Cha and H.-T. Kim "Analysis of Hot Carrier Degradation in 0.25-um Schottky Gate AlGaN/GaN HEMTs" Journal of Electromagnetic Engineering and Science, Vol. 22, No. 3, pp. 291~295, May, 2022

2.

C.-H. Jang, H.-S. Kim, H.-T. Kim and H.-Y. Cha "Temperature- and Frequency-Dependent Ferroelectric Characteristics of Metal-Ferroelectric-Metal Capacitors with Atomic-Layer-Deposited Undoped HfO2 Films" Materials, vol. 15, no. 6, p. 2097, Mar, 2022

1.

J. H. Choi, H. Kim and H. Cha, "Recessed AlGaN/GaN Heterojunction-Based Hydrogen Sensor Operated by Reverse Bias Mode", IEEE sensors journal, vol. 21, no. 2, pp. 1244-1249, January, 2021

2.

V. C. Nguyen, K. KIM and H. Kim, "Performance Optimization of Nitrogen Dioxide Gas Sensor Based on Pd-AlGaN/GaN HEMTs by Gate Bias Modulation", Micromachines, vol. 12, no. 4, p. 400, April, 2021

3.

K. Kim, J. Jang, H. Kim, "Negative differential resistance in Si/GaAs tunnel junction formed by single crystalline nanomembrane transfer method", Results in Physics, vol. 25, p. 104279, May, 2021

4.

T. A. Vuong, H. Cha, H. Kim, "Response Enhancement of Pt–AlGaN/GaN HEMT Gas Sensors by Thin AlGaN Barrier with the Source-Connected Gate Configuration at High Temperature", Micromachines, vol. 12, no. 5, p. 537, May, 2021

5.

V. C. Nguyen, H. Cha, H. Kim, "Operation of NO2 Gas Sensors based on Pd-AlGaN/GaN HEMT up to 500 C", JSTS, vol. 21, no. 06, pp. 412 - 417, December, 2021

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1.

June-Heang Choi, Hyungtak Kim, Hyuk-Kee Sung, and Ho-Young Cha, " Investigation of Stability and Power Consumption of an AlGaN/GaN Heterostructure Hydrogen Gas Sensor Using Different Bias Conditions", Sensors, vol. 19, no. 24, p. 5549, December, 2019

2.

Geunho Cho, Ho-young Cha, and Hyungtak Kim, " Influence of Oxygen-Plasma Treatment on In-Situ SiN/AlGaN/GaN MOSHEMT with PECVD SiO₂ Gate Insulator", Materials, vol. 12, no. 23, p. 3968, November, 2019

3.

Dongmin Keum, Hyungtak Kim, " Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors", Micromachines, vol. 10, no. 11, p. 723, October, 2019

4.

Dongmin Keum, Hyungtak Kim, "Proton-irradiation Effects on Charge Trapping-related Instability of Normally-off AlGaN/GaN Recessed MISHFETs", Journal of Semiconductor Technology and Science, vol. 19, no. 2, pp. 214-219, April, 2019

5.

G. H. Chung, T. A. Vuong, H. Kim, "Demonstration of hydrogen sensing operation of AlGaN/GaN HEMT gas sensors in extreme environment", Results in Physics, vol. 12, pp. 83-84, March, 2019

1.

Hyun-Seop Kim, Su-Kuen Eom, Kwang-Seok Seo, Hyungtak Kim, Ho-Young Cha, "Time-dependent dielectric breakdown of recessed AlGaN/GaN-on-Si MOSHFETs with PECVD SiO₂ gate oxide", Vacuum, vol. 155, pp. 428-433, September, 2018

2.

Dongmin Keum and Hyungtak Kim, "Energy-Dependent Degradation Characteristics of AlGaN/GaN MISHEMTs with 1, 1.5, and 2 MeV Proton Irradiation", ECS Journal of Solid State Science and Technology, vol. 7, no. 9, pp. 159-163, August, 2018

3.

Dongmin Keum, Hyungtak Kim, "Low-temperature characteristics of normally-off AlGaN/GaN-on-Si gate-recessed MOSHFETs", Cryogenics, vol. 93, pp. 51-55, July, 2018

4.

G. Chung, H.-Y. Cha, H. Kim, "Enhanced hydrogen sensitivity of AlGaN/GaN heterojunction gas sensors by GaN-cap layer",
Electronics Letters, vol. 54, no. 14, pp. 896-897, July, 2018

5.

S. Ji, H. Kim, and I.-H. Cho, "Characteristics of Recess Structure Tunneling Field Effect Transistor for High on Current Drivability", Journal of Semiconductor Technology and Science, vol. 18, no. 3, pp. 360-366, June, 2018

6.

J.-I. Kang, H.-K. Sung, H. Kim, E. Chong, H.-Y. Cha, "Diode quenching for Geiger mode avalanche photodiode",
IEICE Electrinics Express, vol. 15, no. 9, pp. 20180062-20180062, April, 2018

7.

H.-S. Kim, W.-H. Jang, S.-K. Eom, S.-W. Han, H. Kim, K.-S. Seo, C.-H. Cho, and  H.-Y. Cha, "Effects of PECVD SiO₂ Gate Dielectric Thickness on Recessed AlGaN/GaN MOS-HFETs", Journal of Semiconductor Technology and Science, vol. 18,
no. 2, pp. 187-192, April, 2018

8.

J.-I. Kang, H. Kim, C.-Y. Han, H. Yang, S. R. Jeon, B. Park, and H.-Y. Cha, "Enhanced UV Absorption of GaN Photodiodes with a ZnO Quantum Dot Coating Layer",  Optics Express, vol. 26, no. 7,  pp. 8296-8300, March, 2018

9.

G. Cho, H.-Y. Cha, and H. Kim, "Parastic Resistance Effects on Mobility Extraction of Normally-off AlGaN/GaN Gate-recessed MISHFETs",  Journal of Semiconductor Technology and Science, vol.18, no.1,  pp. 78-83, February, 2018

10.

J.-G. Lee, D.-H. Kim, S.-K. Eom, S.-H. Roh, K.-S. Seo, H.-S. Kim, H. Kim, H.-Y. Cha, and Y.-C. Byun, "Improved Interface Characteristics of Mo/SiO₂/4H-SiC Metal-Oxide-Semiconductor with Post-Metallization Annealing", Journal of the Korea Physical Society, vol. 72, no. 1,  pp. 166-170, January, 2018

1.

Dongmin Keum, Geunho Cho, Hyungtak Kim, "Degradation Characteristics of AlGaN/GaN MOS-Heterostructure FETs by Alpha-Particle Irradiation",  ECS Journal of Solid State Science and Technology, vol. 6, no. 11, pp.S3030-S3033, August, 2017

2.

June-Heang Choi, Min-Gi Jo, Sang-Woo Han, Hyungtak Kim, Seung-Hwan Kim, Soohwan Jang, Jung-Sik Kim, Ho-Young Cha, "Hydrogen gas sensor of Pd-functionalised AlGaN/GaN heterostructure with high sensitivity and low-power consumption", Electronics Letters, vol. 53, no. 17, pp. 1200-1202, August, 2017

3.

Sang-Woo Han, Min-Gi Jo, Hyungtak Kim, Chun-Hyung Cho, Ho-Young Cha, "AlGaN/GaN-on-Si monolithic power-switching device with integrated gate current booster", Solid-State Electronics, vol. 134, pp. 30-38, August, 2017

4.

Jun-Hyung Cho, Hyungtak Kim, Hyuk-Kee Sung, "Performance optimization of an optically combined dual-loop optoelectronic oscillator based on optical interference analysis", Optical Engineering, vol.56, no.6, pp. 066111-1-066111-6, June, 2017

5.

Hyun-Seop Kim, Won-Ho Jang, Sang-Woo Han, Hyungtak Kim, Chun-Hyung Cho, Jungwoo Oh, and Ho-Young Cha, "AlGaN/GaN-on-Si Power FET with Mo/Au Gate", Journal of Semiconductor Technology and Science, vol.17, no.2, pp.204-209, April, 2017

6.

Dongmin Keum, Hyuk-kee Sung, and Hyungtak Kim, "Degradation Characteristics of Normally-off p-AlGaN gate AlGaN/GaN HEMTs with 5 MeV Proton Irradiation", IEEE Transactions on Nuclear Science, vol.64, no.1, pp.258-262, January, 2017

1.

Hyungtak Kim, Youngjin Kang, and Hyuk-Kee Sung, "Investigation of Kink Effect in Normally-off AlGaN/GaN Recessed-gate MOS-Heterosturcture FETs", Journal of Vacuum Science Technology B, vol.34, no.5, September, 2016

2.

Sung-Hoon Park, Jae-Gil Lee, Chun-Hyung Cho, Yearn-Ik Choi, Hyungtak Kim, and Ho-Young Cha,  "Diode Embedded AlGaN/GaN Heterojunction Field-Effect Transistor", Journal of Semiconductor Technology and Science, vol.16, no.2, pp. 215-220, April, 2016

3.

D. Keum, K. Cho, and H. Kim, "Non-volatile memory operation in normally-off GaN MOS heterostructure field effect transistors with thin AlGaN barrier", Electronics Letters, vol. 52, no. 8, pp. 661-663, April, 2016

1.

Dongmin Keum, Ho-young Cha, and Hyungtak Kim, "Proton Bombardment Effects on Normally-off AlGaN/GaN-on-Si Recessed MISHeterostructure FETs," IEEE Transactions on Nuclear Science, vol. 62, no. 6, pp. 3362-3368, December, 2015

2.

Sungju Choi, Youngjin Kang, Jonghwa Kim, Jungmok Kim, Sung-Jin Choi, Dong Myong Kim, Ho-Young Cha, Hyungtak Kim, and Dae Hwan Kim, "Frequency-dependent C-V Characteristic-based Extraction of Interface Trap Density in Normally-off Gate-recessed AlGaN/GaN Heterojunction Field-effect Transistors," Journal of Semiconductor Technology and Science, vol.15, no.5, pp. 497-502, October, 2015

3.

Jun-Hyung Cho, Hyungtak Kim, and Hyuk-Kee Sung, "Reduction of Spurious Tones and Phase Noise in Dual-Loop OEO by Loop-Gain Control," IEEE Photonics Technology Letters, vol. 27, no. 13, pp. 1391-1393, July, 2015

4.

Youngjin Kang, Sungju Choi, Ho-Young Cha, Hyungtak Kim and Dae Hwan Kim, "Extraction of the interface trap density through the differential subthreshold ideality factor technique in normally-off AlGaN/GaN MOSHFETs," Journal of the Korean Physical Society, vol. 66, no. 8, pp. 1291-1294, April, 2015

1.

J.-Y. Lee, B.-R. Park, H. Kim, J. Kim, and H.-Y. Cha. "AlGaN/GaN MOSHFET power switching transistor  with embedded fast recovery diode," Electon. Mater. Lett., vol. 10, no. 6, pp. 1115-1120, November, 2014

2.

Dong-Min Keum, Shinhyuk Choi, Youngjin Kang, Jae-Gil Lee, Ho-Young Cha, and Hyungtak Kim, "Temperature-Dependent Instabilities of DC characteristics in AlGaN/GaN-on-Si Heterojunction Field Effect Transistors," Journal of Semiconductor Technology and Science, vol.14, no.5, pp. 682-687, October, 2014

3.

S. Choi, J.-G. Lee, Y. Kang, C.-H. Cho, H.-Y. Cha, and H. Kim, "Development of a Au-free process using Mo-based metallization for high-power AlGaN/GaN-on-Si heterostructure field effect transistors," Journal of Korean Physical Society, vol. 64, no. 4, pp. 526-531, September, 2014

1.

S. Choi, J.-G. Lee, H.-Y. Cha, and H. Kim, "Degradation characteristics of high-voltage AlGaN/GaN-on-Si heterostructure FETs under a reverse gate bias stress," Journal of the Korean Physical Society, vol. 63, no. 6, pp. 1208-1212, October, 2013 

2.

S. Choi, J.-G. Lee, H.-Y. Cha, and H. Kim, "Bias-stress-induced trapping effect of high-voltage field-plated AlGaN/GaN-on-Si heterostructure FETs," Journal of Korean Physical Society, vol.62, no. 6, pp.954-958, April, 2013

3.

J.-G. Lee, S. Choi, B.-R. Park, K.-S. Seo, H. Kim, and H.-Y. Cha, "Nonvolatile Memory Devices Based on SiO₂/GaN/AlGaN/GaN structures," Electronic Letters, vol. 49, no. 8, pp. 529-531, April, 2013

4.

B.-R. Park, J.-G. Lee, W. Choi, H. Kim, K.-S. Seo and H.-Y. Cha, "High Quality ICPCVD SiO₂ for Normally-off AlGaN/GaN-on-Si Recessed MOSHFETs," IEEE Electron Device Letter, vol. 34, no. 3, pp. 354-356, March, 2013

5.

H.-S. Yoon, H.-K. Sung, and H. Kim, "Field-induced Degradation of Organic Field-effect Transistors under Vacuum Condition," Journal of the Korean Physical Society, vol. 62, no. 3, pp. 536-540, February, 2013

1.

Y.-S. Kim, M.-K. Bae, W.-J. Kim. D.-S. Kong, H.-K. Jung, H. Kim, S.-W Kim, D.-M. Kim, D.-H. Kim, "Amorphous InGaZnO Thin-Film Transistors:Part I: Complete Extraction of Density of States Over the Full Subband-Gap Energy Range," IEEE Transactions on Electron Devices, vol.59, no.10, pp.2689-2698, October, 2012

2.

H.-S. Yoon and H. Kim, "Optimization of Field-plate AlGaN/GaN HFETs for High-voltage and High-frequency Operation," Journal of the Korean Physical Society, vol.60, no.1, pp. 113-117, January, 2012

1.

H. Kim, J. Lim, and H.-Y. Cha, "DC Characteristics of Wide Bandgap Semiconductor Feild Effect Transistors at Cryogenic Temperatures," Journal of Korean Physical Society, vol. 56, no. 5, pp. 1523-1526, 2010

2.

H.-Y. Cha, H.-K. Sung, H. Kim, C.-H. Cho, and P. M. Sandvik, "4H-SiC Avalanche Photodiodes for 280nm UV Detection," IEICE Transactions on Electronics, vol. E93.C, no. 5, pp. 648-650, 2010

3.

D. W. Kim, I. Cho, J. Y. Kim, H. L. Jang, G. S. Han, H. S. Jung, H. Kim, and K. S. Hong "Simple Large-Scale Synthesis of Hydroxyapatite Nanoparticles: In Situ Observation of Crystallization Process," Langmuir, vol. 26, no. 1, pp. 384-388, 2009

4.

H. S. Jung and H. Kim, "Origin of Low Photocatalytic Activity of Rutile TiO2," Electronic Materals Letters, vol. 5, no.2, pp. 73-76, 2009

5.

H. Kim and L. F. Eastman, "High-electric-field Induced Trap Generation in AlGaN/GaN Heterostructure Field effect Transistors," Journal of The Korean Physical Society, vol. 55, no. 2, pp. 666-670, 2009

6.

L. F. Eastman, V. Tilak, R. Thompson, B. Green, V. Kaper, T. Prunty, R. Shealy, J. Smart, and H. Kim, "High power AlGaN/GaN HEMT`s," Compound Semiconductors 2002, vol. 174, pp. 227-230, 2003

7.

V. Kaper, V. Tilak, H. Kim, A. Vertiatchikh, R. M. Thompson, T. Prunty, L. F. Eastman, and J. R. Shealy, "High-power monolithic AlGaN/GaN HEMT oscillator," IEEE Journal of Solid-state Circuits, vol. 38, no. 9, pp. 1457-1461, 2003

8.

H. Kim, R. M. Thompson, V. Tilak, T. Prunty, J. R. Shealy, and L. F. Eastman, "Effects of SiN passivation and high-electric field on AlGaN/GaN HFET degradation," IEEE Electron Device Letters, vol. 24, no. 7, pp. 421-423, 2003

9.

H. Kim, A. Vertiatchikh, R. M. Thompson, V. Tilak, T. R. Prunty, J. R. Shealy, and L. F. Eastman, "Hot electron induced degradation of undoped AlGaN/GaN HFETs," Microelectronics Reliability, vol. 43, no. 6, pp. 823-827, 2003

10.

G. Koley, H. Kim, L. F. Eastman, and M. G. Spencer, "Electrical bias stress related degradation of AlGaN/GaN HEMTs,"  Electronics Letters, vol. 39, no. 16, pp. 1217-1218, 2003

11.

D. K. Sahoo, R. K. Lal, H. Kim, V. Tilak, and L. F. Eastman, "High-field effects in sillicon nitride passivated GaN MODFETs," IEEE Ttansactions on Electron Devices, vol. 50, no. 5, pp. 1163-1170, 2003

12.

V. Tilak, V. Kaper, R. Thompson, T. Prunty, H. Kim, J. Smart, J. R. Shealy, and L. F. Eastman, "Correlation of pulsed IV measurements and high power performance of AlGaN/GaN HEMTs," Compound Semiconductors 2002, vol. 174, pp. 287-290, 2003

13.

L. F. Eastman, V. Tilak, J. Smart, B. Green, A. Vertiatchikh, N. Weimann, O. Ambacher, E. Chumbes, H. Kim, T. Prunty, J. H. Hwang, W. J. Schaff, B. K. Ridley, and J. R. Shealy, and V. Kaper, "Progress in nitride-based microwave HEMTs," Compound Semiconductors 2001, no. 170, pp. 1-9, 2002.

14.

L. F. Eastman, V. Tilak, J. Smart, B. M. Green, E. M. Chumbes, R. Dimitrov, H. Kim, O. S. Ambacher, N. Weimann, T. Prunty, M. Murphy, W. J. Schaff, and J. R. Shealy, "Undoped AlGaN/GaN HEMTs for microwave power amplification," IEEE Transactions on Electron Devices, vol. 48, no. 3, pp. 479-485, 2001.

15.

B. M. Green, V. Tilak, S. Lee, H. Kim, J. A. Smart, K. J. Webb, J. R. Shealy, and L. F. Eastman, "High-power broad-band AlGaN/GaN HEMT MMICs on SiC substrates," IEEE Transactions on Microwave Theory and Techniques, vol. 49, no. 12, pp. 2486-2493, 2001.

16.

H. Kim, V. Tilak, B. M. Green, J. A. Smart, W. J. Schaff, J. R. Shealy, and L. F. Eastman, "Reliability evaluation of high power AlGaN/GaN HEMTs on SiC substrate," Physica Status Soldi a-applied Research, vol. 188, no. 1, pp. 203-206, 2001.

17.

V. Tilak, B. Green, V. Kaper, H. Kim, T. Prunty, J. Smart, and J. Shealy, and L. F. Eastman, "Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs," IEEE Electron Device Letters, vol. 22, no. 11, pp. 504-506, 2001.

18.

R. Dimitrov, V. Tilak, W. Yeo, B. Green, H. Kim, J. Smart, E. Chumbes, J. R. Shealy, W. Schaff, L. F. Eastman, C. Miskys, O. Ambacher, and M. Stutzmann, "Influence of oxygen and methane plasma on the electrical properties of undoped AlGaN/GaN heterostructures for high power transistors," Solid-state Electronics, vol. 44, no. 8, pp. 1361-1365, 2000.

19.

B. M. Green, K. K. Chu, J. A. Smart, V. Tilak, H. Kim, J. R. Shealy, and L. F. Eastman, "Cascode connected AlGaN/GaN HEMT's on SiC substrates," IEEE Microwave and Guided Wave Letters, vol. 10, no. 8, pp. 316-318, 2000.