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IoT Sensor | Micro Plasma |
Nano FET | Organic TFT
Professor | Student |
Alumni
Notice | Lecture Journal | University

 

 

 

 

 

 

Youngmin Kim

 

 

 

Professor
Email : ymkim@hongik.ac.kr

1983 ~ 1987 Seoul National University Bachelor
1988 ~ 1990 University of Texas at Austin Master
1991 ~ 1995 University of Texas at Austin Ph. D

1995 ~ 2002

 

Texas Instruments Inc.

Dallas, Texas

R&D Senior Member
2002 ~ Hongik Univ. Professor
2002 ~ IEEE Senior Member

 

Publications

Journals


1

T. Lim, Y. Kim, "Energy Management Switch for a Self‑Powered Wireless Sensor in Monitoring Power Systems", Journal of Electrical Engineering & Technology, Vol 18, Issue 4, pp. 3105-3109, Jul 2023. (SCI)

 

2

Y. Kim, "A Magnetically Actuated Plasma Device for Ionic Wind Generation", IEEE Electron Device Letters, Vol 43, No. 1, January 2022. (SCI)

 

3

C.Hong, Y. Kim, "A DBD-Integrated Discharge Device for Low-Voltage Atmospheric Plasma Generation", IEEE Transactions on Plasma Science, Vol 48, Issue 11, pp. 3890-3894, November 2020. (SCI)

 

4

T. Lim, Y. Kim, "Compact Self-Powered Wireless Sensors for Real-Time Monitoring of Power Lines", Journal of Electrical Engineering & Technology, Vol 14, Issue 3, pp. 1321-1326, May 2019. (SCI)

 

5

H. Park, Y. Kim, "Measurement of a Threshold Initiation Carrier Density for a Reduction in Gas Breakdown Voltage", Journal of Electrical Engineering & Technology, Vol 13, Issue 6, pp. 2421-2424, November 2018. (SCI)

 

6

S. Hwang, H. Pakr, Y. Kim, "Low Voltage Atmospheric Plasma Generation using DBD Initiation Carrier Injection", The Transactions of the Korean Institute of Electrical Engineers, Vol. 67, No. 1, pp. 82-86, January 2018.

 

7

Y. Kim, J. Park, "Highly efficient initiation carrier injection for nonthermal atmospheric plasma generation", Journal of Vacuum Science & Technology - Section B Vol 33, Issue 6, November 2015. (SCI)

 

 

L. Lee, Y. Kim, "Low-Voltage Atmospheric-Plasma Generation by Utilizing Afterglow Initiation Carrier ", IEEE Transaction on Plasma Science, Vol. 41, No. 1, pp. 155-158, January 2013. (SCI)

 

9

H. Park, Y. Kim, "Active-Current-Controlled Atmospheric-Plasma Generation Using a Plasma-on-a-Chip", IEEE Transaction on Plasma Science, Vol. 39, No. 4, pp. 1110-1113, April 2011. (SCI)

 

10

K. Kim and Y. Kim, "Intrinsic Capacitance Characteristics of Top-Contact Organic Thin-Film Transistors", IEEE Transactions on Electron Devices, Vol. 57, No. 9, pp. 2344-2347, September 2010. (SCI)

 

11

J. Park, B. Park, H. Choi, Y. Kim and J. Choi, "Pentacene TFT with reduced threshold voltage using PMMA-co-MAA/Sol-Gel-Derived TiO2 composite insulator", IEEE Electron Device letters, Vol. 30, No. 11, pp. 1146-1148, November 2009. (SCI)

 

12

H. Ahn, D. Ryu, Y. Kim, K. Kwon, J. Lee and J. Cho, "Phase behavior of Polystyrene-b-poly(methyl methacrylate) diblock copolymer", Macromolecules, Vol. 42, No. 20, pp. 7897-7902, September 2009. (SCI)

 

13

J. Jang, T. Lim and Y. Kim, "Optimum source/drain overlap design for 16nm high-k/metal gate MOSFETs", Semiconductor science and Technology, Vol. 24, No. 10, September 2009. (SCI)

 

14

J. Jin, J. Kim and Y. Kim, "Effect of duty cycle on atmospheric plasma generation using micromachined electrodes", Japanese Journal of Applied Physics, vol.48, No.4 C196, April 2009. (SCI)

 

15

S. Hong, J. Choi and Y. Kim, “Degraded off-state current of organic thin-film transistor and annealing effect", IEEE Trans On Eelectron Devices, vol.55, No.12, Dec. 2008. (SCI)

 

16

T. Lim and Y. Kim, “Effect of band-to-band tunnelling leakage on 28 nm MOSFET design”, Electronic letters, Vol. 44, No. 2, pp. 157-158, 2008 (SCI)

 

17

J. Kim, S. Jin and Y. Kim “Effect of rise time of a pulse bias voltage an atmospheric plasma generation”, Trans. KIEE. Vol. 57, pp. 1218-1221, Jul 2008

 

18

T. Lim, J. Jang and Y. Kim “28 nm MOSFET design for low standby power applications”, Trans. KIEE. VOL.57, pp.235-238, Feb 2008

 

19

S. Han and Y. Kim, "Self-Aligned Micro Triode for plasma generation at atmospheric pressure," Journal of Vacuum Science and Technology B, Vol.25, pp. 286-288, Jan 2007 (SCI)

 

20

S. Joo, H. Lee, I. Baek, C. Shim, J. Hong, J. Han, K. Kim, and Y. Kim, "Selectively formed MOCVD TiSiN and Ta barrier metal using Direct contact via process for sub-65 nm interconnects," Japanese Journal of Applied Physics, vol. 46, pp. 1947-1950 April 2007 (SCI)

 

21

S. Kim, C. Shim, J. Hong, H. Lee, J. Han, K. Kim, Y. Kim, "Copper hillock induced copper diffusion and corrosion behavior in dual damacene process,” Electrochemical and solid-state Letters, Volume 10, Issue 6, pp. H193-H195, 2007 (SCI)

 

22

S. Khang, Y. Kim, “A nickel micro switch operating in a wide range of torsion angles," Journal of Electrical Engineering Technology, Vol. 2, No. 2, 2007

 

23

한성호, 김재혁, 김영민 “대기압 플라즈마 발생용 마이크로 전극 제작 및 저전압 동작특성," 대한전기학회 논문집 C, 4, pp. 773-776, 2007

 

24

S. Kim, C. Shim, J. Hong, H. Lee, J. Han, K. Kim, and Y. Kim “Copper Diffusion and Corrosion Behavior through the Hillock Defect found beneath the weak SiN Dielectric Barrier in Dual Damascene Process”, ECS transaction, Vol. 2, No. 1, pp. 237-241, 2006 (SCI)

 

25

Y. Oh, Y. Kim, “ Gate Workfunction Optimization of a 32 nm Metal Gate MOSFET for Low Power Applications”, Journal of electrical engineering & technology, vol. 1, pp. 237-240, 2006

 

26

H. Moon, J. Kim and Y. Kim, "Measurement of yield strength for electroplated nickel film using micro-cantilever," KIEE International Transactions on EA, vol. 5, pp.247-251, 2004

 

27

Y. Kim, "MOSFET performance Degradation induced by a trench isolation oxide step", Journal of the Korean Physical Society, Vol.42, pp.821-824, 2003 (SCI)

 

28

Y. Kim, A. Chatterjee and S. Sridhar, "Trench Isolation Step Induced (TRISI) Narrow Width Effect on MOSFET", IEEE Electron Device Letters, Vol. 23, pp. 600-602, October 2002 (SCI)


29

Y. Kim and D. P. Neikirk, " Design for manufacture of micro Fabry-Perot cavity-based microsensors", Sensors and Actuators, vol. A(Physical) 50, pp.141-146, 1995 (SCI)


30

‘Y. Kim and D. P. Neikirk, "Surface micromachined Fabry-Perot pressure transducers with optical fiber interconnect", SPIE micromachining and microfabrication' 95, vol. 1542, October, 1995, pp.242-249 (SCI-E)


31

‘Y. Kim and D. P. Neikirk, " Surface micromachined optical pressure sensor", IEEE Photonics Technology Letters, vol. 7, No.12, pp.1471-1473, 1995 (SCI)


 

Patents

1


Y. Kim and T. Lim, 'Highly efficient self -powered wireless sensor and sensor module," KR 10-2062633 granted on 12/30/2019

 

2


김영민, "플라즈마 씨드가 주입된 유전체 장벽 방전 기반 대기압 플라즈마 발생소자," KR 10-1576600 granted on 12/04/2015

 

3


Y. Kim and S. Walsh, "A tunable sidewall spacer process for CMOS integration circuits," US 6908800 granted on 6/21/2005

 

4

N. Mahaligam, Y. Kim and S. Zhao, "Additional n-type LDD/pocket implant for improving short-channel NMOS ESD robustness," US 6822297 granted on 11/23/2004

 

5

Y. Kim, S. Tang, A. Chatterjee and S. Sridar, " High performance PNP bipolar device fully compatible with CMOS process," US 6794730 granted on 9/21/2004

 

6

A. Marshall, Y. Kim, D. Scott, " Memory cell with transistors having relatively high threshold voltages in response to selective gate doping," US 6773972 granted on 8/10/2004

 

7

C. Salling, A. Chatterjee and Y. Kim, "Method to increase substrate potential in MOS transistors used in ESD protection circuits," US 6767810 granted on 7/27/2004

 

8

Y. Kim and A. Chatterjee, " Transistor having selectively doped channel regions," US 6730555 Granted on 5/4/2004

 

9

S. Sridhar, Y. Kim, M. Rodder and J. Wu, "Process of increasing screen dielectric thickness ," US 67236161 Granted on 4/20/2004

 

10

.N. Mahaligam, Y. Kim and A. Chatterjee, "Fabricating dual voltage CMOSFETs using additional implant into core at high voltage mask," US 6713334 Granted on 3/30/2004

 

11

Y. Kim and A. Chatterjee, " Buried Channel PMOS Transistor in Dual-Gate CMOS with reduced mask steps," US 6514810 Granted on 2/4/2003

 

12

Y. Kim, S. Walsh and J. Mavoori, "A stacked poly/amorphous silicon gate giving low sheet resistance silicide film at sub-micron linewidths," U.S 6107147 Granted on 8/22/2000

 

13

Y. Kim and J. Jarvis, " A low cost solution to integrate two different MOSFET design on a chip," pending in U.S Patents Office and filed on 05/00

 

 

Presentations

1

H. Park J. Jeong and Y. Kim, “Current controlled Plasma-on-a-chip for atmospheric plasma generation”, The International Conference on Tech Connect World, Anaheim, CA, USA, pp.356-359, 2010

 

2

T. Lim, J. Jang and Y. Kim, “Source/drain design for 16 nm surrounding gate MOSFETs”, The International Conference on Semiconductor Device Research Symposium, ISDRS, 2009

 

3

K. Kim, J. Jeong, T. Lim and Y. Kim, “Interface characterization and charge storage effect of a Polystrene gate dielectric organic thin-film transistor”, The International Conference on Solid State Devices and Materials, Sendai, Japan, pp.619-620, 2009

 

4

H. Park, J. Kim and Y. Kim, “Discharge current controlled atmospheric microplasma generation”, The International Conference on Solid State Devices and Materials, Sendai, Japan, pp. 671-672, 2009

 

5

J. Jang, T. Lim, H. Kim and Y. Kim, “Optimization of source/drain overlap to gate for 16nm MOSFET design”, The International Conference on Solid State Devices and Materials, Tsukuba, Japan, pp. 434-435, 2008

 

6

J. Jin, K. Kim and Y. Kim, “Pulse width modulated atmospheric plasma generation using micro electrode array”, The International Conference on Solid State Devices and Materials, Tsukuba, Japan, pp. 650-651, 2008

 

7

J. Park, K. Kim, Y. Kim, J. Choi, “Reduction of threshold voltage in organic thin film transistors by treating ITO gate electrode", The International Conference on Solid State Devices and Materials, Tsukuba, Japan, pp. 620-621, 2008

 

8

Y. Kim, “Device challenges in delivering 32nm CMOS Technology”, SEMICON Korea ,pp.257-260, 2008 (Invited speech)

 

9

K. Kim, Y. Kim ” Effective workfunction of Pentacene on Polystyrene extracted from C-V measurements”, The Korea Conference on Semiconductors, pp.834-835, 2008

 

10

J. Kim, K. Kim, S. Jin and Y. Kim, "Effect of rise time on atmospheric plasma generated using micro-triode", The International Conference on Solid State Devices and Materials, Tsukuba, Japan, pp. 674-675, 2007

 

11

S. Hong, J. Kang, T. Lim, J. Kim, J. Choi, Y. Kim, "Gate dielectric integrity of all organic thin film transistor and annealing effect", ASIA DISPLAY, Shanghai, China, pp.1696-1699, 2007

 

12

Y. Oh, T. Lim and Y. Kim, "Effect of gate workfunction on 32 nm metal gate MOSFET characteristics", The Korea Conference on Semiconductors, pp.1221-1222, 2006

 

13

S. Kim, C. Shim, J. Hong, H. Lee, J. Han, K. Kim and Y. Kim, 'Copper diffusion and corrosion behavior through the hillock defect found beneath the weak SiN dielectric barrier in dual damascene Process', 209th ECS Meeting, Denver, Colorado, 2006

 

14

H. Lee, S. Joo, I. Baek, C. Shim, J. Hong, J. Han, K. Kim, Y. Kim, "A MOCVD TiSiN/Ta Barrier Metal for Improved EM performance and Low Via/line resistance using direct contact via (DCV) process for sub-65 nm technology", The International Conference on Solid State Devices and Materials, Tsukuba, Japan, pp. 146-147, 2006

 

15

한성호, 강성중, 김재혁, 김영민, 최종선, "대기압 Microplasma 발생을 위한 미소 3극형 Pulsed 방전 소자의 제작 및 동작 특성 연구," 제 8 회 한국 MEMS 학술대회 논문집, pp. 649-652, 2006

 

16

S. Khang, J. Kim and Y. Kim, "A micro switch rotating through large angles for optical cross-connect", The International Conference of on Electrical Engineering, Hongkong, China, 2006

 

17

강성중, 문형식, 김주환, 한성호, 김영민, 박승호, 한병기, “광각 동작을 위한 고속 Nickel Optical MEMS Switch” 제 7 회 한국 MEMS 학술대회 초록집, pp. 200-203, 2005

 

18

오용호, 김영민, “저전력 분야 응용을 위한 32 nm 금속 게이트 전극 MOSFET 소자의 게이트 workfunction 의 최적화”, 대한전기학회 하계학술대회, 2005

 

19

문형식, 김주환, 김영민, “니켈 전기 도금된 MEMS cantilever의 large deflection 특성", 한국 MEMS 학술 대회 초록집, 2004

 

20

김주환, 문형식, 김영민, “미소간극을 갖는 MEMS 방전소자 제작 및 특성 연구”, 전기물성 응용부문회 추계학술대회 논문집, pp.46-48, 2004

 

21 

 

S. Zhao, S. Tang, A. Chatterjee and Y. Kim, "GIDL simulation and optimization for 0.13 um/1.5V low power CMOS transistor design", 2002 International Conference on simulation of Semiconductor Processes and Devices, Kobe, Japan, September, 2002

 

22

Y. Kim et. al, "Analog integration in a 0.35um pitch Cu, 0.1um Lpoly, low power digital CMOS technology", 2001 International Electron Device Meeting, Washington DC, December, 2001

 

23

A. Appel, S. Crank, Y. Kim, C. Scharrer, D. Spratt, B. Strong, M. Yao, H. Tigelaar, " Manufacturable 0.30 um gate CMOS Technology for high speed microprocessors", 1996 Symposium on VLSI Technology Digest of Technical Papers, Honolulu, Hawaii, pp. 220-221, June 1996


24

C. Hearn, W. Maddox, Y. Kim, V. Gupta, D. Masser, P. Koeneman, C. Chu, I. Busch-Vishniac, D. Neikirk, "Smart Mechanical bearing using MEMS technology", ASME Tribology Symposium, Houston, TX, January 1995


25

Y. Kim and D. P. Neikirk, " Optically interrogated pressure microsensor", Journal of Acoustic Society of America, 124th meeting, New Orleans, LA, October 1992


26

Y. Kim and W. Wang, D. P. Neikirk and I. Busch-Vishniac, "Fabrication and characterization clover type position sensitive photodetector", IEEE Instrumentation and Measurement Conference, New York, NY, May 1992