Professor, School of Electronic & Electrical Engineering
Hongik University, Seoul, Korea
Email : email@example.com
P-707 (공학2동 707호)
Dr. Jongsun Kim received the B.S.
degree in electronics engineering from Hanyang University,
Seoul and the M.S. degree in electronic
and electrical engineering from Pohang University of Science and
Technology (POSTECH), Pohang,
From 1994 to 2001, he was with Samsung
Electronics as a senior research engineer in the DRAM Design Team, where
he worked on the design and development of Synchronous DRAMs, SGDRAMs, Rambus DRAMs, and other specialty DRAMs.
He received the Ph.D. degree from the
Electrical Engineering Department, University
of California, Los Angeles (UCLA) in 2006 in the field
of Integrated Circuits and Systems. He was a Postdoctoral Fellow at UCLA
from 2006 to 2007.
After his research at UCLA, he
returned to South Korea to continue his memory design career at Samsung,
where he was in charge of developing the next generation high-speed DDR4
Dr. Kim joined the School of Electronic
& Electrical Engineering, Hongik University
in March 2008.
Prof. Kim’s research interests
are in the area of high-performance mixed-mode (analog & digital)
circuits and systems design.
Current research area includes
reconfigurable RF/CDMA/FDMA interconnect circuits and systems, high-speed
and low-power transceiver circuits for chip-to-chip communications, clock
recovery circuits (PLLs/DLLs/CDRs), digital CMOS frequency synthesizers,
signal integrity and power integrity, and high-performance and high-speed
memory interface circuits and systems.
A-SSCC (IEEE Asian
Solid-State Circuits Conference): Technical Program Committee Member
Workshop on Fundamentals and Applications of Advanced Semiconductor
Devices): Program Co-Chair
대한전자공학회 임원 (협동이사)
대한전자공학회 논문지 편집위원, 대한전자공학회지 편집위원
Journal of Semiconductor
Technology and Science (JSTS): Guest Editor and Technical Reviewer
IEEE Seoul Section: