Professor, School of Electronic & Electrical Engineering
Hongik University, Seoul, Korea
Email : email@example.com
P-707 (공학2동 707호)
Dr. Jongsun Kim received the B.S.
degree in electronics engineering from Hanyang University,
Seoul and the M.S. degree in electronic
and electrical engineering from Pohang University of Science and
Technology (POSTECH), Pohang,
From 1994 to 2001, he was with Samsung
Electronics as a senior research engineer in the DRAM Design Team, where
he worked on the design and development of Synchronous DRAMs, SGDRAMs, Rambus DRAMs, and other specialty DRAMs.
He received the Ph.D. degree from the
Electrical Engineering Department, University
of California, Los Angeles (UCLA) in 2006 in the field
of Integrated Circuits and Systems. He was a Postdoctoral Fellow at UCLA
from 2006 to 2007.
After his research at UCLA, he
returned to South Korea to continue his memory design career at Samsung,
where he was in charge of developing the next generation high-speed DDR4
Dr. Kim joined the School of Electronic
& Electrical Engineering, Hongik University
in March 2008.
Prof. Kim’s research interests
are in the area of high-performance mixed-mode (analog & digital)
circuits and systems design.
Current research area includes
reconfigurable PMIC (DC-DC Converter), RF/CDMA/FDMA interconnect circuits
and systems, high-speed and low-power transceiver circuits for
chip-to-chip communications, serial link and clock recovery circuits
(PLLs/DLLs/CDRs), digital CMOS frequency synthesizers, signal integrity
and power integrity, and high-performance and high-speed memory interface
circuits and systems.
A-SSCC (IEEE Asian
Solid-State Circuits Conference): Technical Program Committee Member
Journal of Semiconductor
Technology and Science (JSTS): Associate Editor and Technical Reviewer