Wide Bandgap Semiconductor Electronics

Recently, semiconductor technology based on wide bandgap(WBG) materials such as GaN or SiC is most intensively developed in global semiconductor communities. Wide bandgap semiconductors can be key players in the next generation high-speed and high-power systems due to their superior properties including high current capacity, high channel mobility and high breakdown voltage. We are working on fabrication, characterization, and modeling of WBG semiconductor electronic devices aiming at the state-of-the-art power electronics in power supplies, electric vehicle, industrial drives, and smart grids.

Reliability Physics

When the state-of-the-art semiconductor devices are being developed, we focus on achieving the best device performance. However, no customers want to use the devices with short lifetime. In our lab, we conduct research on the reliability physics of semiconductor devices to investigate the degradation mechanisms and provide the solution to the robust reliability. We fabricate semiconductor devices in the clean room, perform the stress test to degrade or kill the devices, and analyze the degradation phenomena using electrical, microscopical, and photonic technique.

 

Extreme Environment Electronics

Recently, much efforts have been made to expand the territory of human activity and explore natural resources. This mission is usually carried out in the extreme environment including very high or low temperature, high radiation, highly corrosive media, or high mechanical stress. We perform research on the development of electronic and sensor devices for operation within extreme harsh environments. Our research is focused on the development of temperature tolerant, chemically resistant and radiation-hardened wide bandgap semiconductor devices.

 

   

 

 

 

 

 

 

Copyright (C) 2011 Hongik Uni. MiRe Lab. All rights reserved.

P508, Electronic and Electrical Engineering, Hongik University, 94, Wausan-ro, Mapo-gu, Seoul, Korea

TEL: +82-2-320-3013   FAX: +82-2-320-1193   Email: rmaehdalf@hanmail.net